Tuning structural, electrical and mechanical properties of diamond-like carbon films by substrate bias voltage

Diamond-like carbon (DLC) thin films are deposited by unbalanced RF magnetron sputtering at substrate bias voltages to tune the ratio of the sp3 to sp(2) bonds and hydrogen composition in optimized Ar: CH4 ambient. The effect of substrate bias voltage on the sp(2) and sp(3) bonding ratios and hydrogen concentration is correlated to the physical and elastic properties for the optimized DLC film. Raman spectroscopy qualitatively established sp(3)/sp(2) bonding ratios from the I-D/I-G ratio at various substrate bias voltages and the trend is in agreement with XPS data. High H content of at least 18.00 +/- 2.00 at. % is evaluated from photoluminescence background for all substrate bias voltages. Applying an empirical approach to the I-D/I-G ratios, we derive the Tauc band gaps in the range between 1.51 and 1.57 eV. The highest band gap correlates to the highest resistivity values (131 x 10(2) Omega.cm) measured for DLC films deposited at the highest bias voltage of -100 V and with lowest H content. As DLC thin films deposited at -100 V exhibit optimal properties, the elastic constants are subsequently evaluated using the Surface Elastodynamic Greens functions to the discrete phonon dispersion obtained by surface Brillouin scat-tering. Enhancement in bulk, shear and elastic moduli is ascribed to higher sp(3)/sp(2) ratio and predominantly to H content.

Automated summary

DLC thin films are deposited using unbalanced RF magnetron sputtering at different substrate bias voltages to adjust sp3 and sp(2) bond ratios and hydrogen content in an optimized Ar: CH4 atmosphere. The substrate bias voltage affects the physical and elastic properties of the optimized DLC film, with Raman spectroscopy and XPS data showing changes in sp(3)/sp(2) bond ratios. The high hydrogen content is confirmed by photoluminescence background for all bias voltages.