Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition

We report a viable method to produce nanocrystalline graphene films on polycrystalline nickel (Ni) with enhanced N doping at low temperatures by a cold-wall plasma-assisted chemical vapor deposition (CVD) method. The growth of nanocrystalline graphene films was carried out in a benzene/ammonia/argon (C6H6/NH3/Ar) system, in which the temperature of the substrate heated by Joule heating can be further lowered to 100 degrees C to achieve a low sheet resistance of 3.3 kO sq(-1) at a high optical transmittance of 97.2%. The morphological, structural, and electrical properties and the chemical compositions of the obtained N-doped nanocrystalline graphene films can be tailored by controlling the growth parameters. An increase in the concentration of atomic N from 1.42 to 11.28 atomic percent (at.%) is expected due to the synergetic effects of a high NH3/Ar ratio and plasma power. The possible growth mechanism of nanocrystalline graphene films is also discussed to understand the basic chemical reactions that occur at such low temperatures with the presence of plasma as well as the formation of pyridinic-N- and pyrrolic-Ndominated nanocrystalline graphene. The realization of nanocrystalline graphene films with enhanced N doping at 100 degrees C may open great potential in developing future transparent nanodevices.

Automated summary

The method presents a viable approach to produce nanocrystalline graphene films with enhanced N doping at low temperatures on Ni using CVD. The films exhibit low sheet resistance, high optical transmittance, and properties that can be tailored by controlling growth parameters, suggesting potential for future transparent nanodevices.