Journal
PHYSICAL REVIEW MATERIALS
Volume 5, Issue 6, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.5.064602
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Funding
- network GaNeX [ANR-11-LABX-0014]
- BONASPES project [ANR-19-CE30 0007]
- ZEOLIGHT project [ANR-19-CE08-0016]
- Universite de Montpellier
- Office of Naval Research [N00014-20-1-2474]
- National Science Foundation [1538127]
- Agence Nationale de la Recherche (ANR) [ANR-19-CE08-0016] Funding Source: Agence Nationale de la Recherche (ANR)
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1538127] Funding Source: National Science Foundation
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The study reports on the properties of different polymorphic boron nitride samples based on photoluminescence measurements. It shows that the Bernal BN or graphitic BN polymorph has a higher excitonic fundamental bandgap compared to hexagonal BN.
We report a study of polymorphic boron nitride (BN) samples. We interpret the photoluminescence (PL) line at 6.032 +/- 0.005 eV that can be recorded at 8 K in sp(2)-bonded BN as being the signature of the excitonic fundamental bandgap of the Bernal BN (bBN) [or graphitic BN (gBN)] polymorph. This is determined by advanced PL measurements combined with x-ray characterizations on pure hexagonal BN (hBN) and on polymorphic crystal samples, later compared with the theoretical predictions of Sponza et al., [Phys. Rev. B 98. 125206 (2018)]. The overall picture is consistent with a direct excitonic fundamental bandgap of the bBN (or gBN) polymorph. This value dX(b) = 6.032 +/- 0.005 eV is higher than the indirect bandgap of hBN (iX(h) = 5.955 +/- 0.005 eV).
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