Journal
FRONTIERS IN MATERIALS
Volume 8, Issue -, Pages -Publisher
FRONTIERS MEDIA SA
DOI: 10.3389/fmats.2021.717760
Keywords
nonlinear FOM; graphene; MoS2; Ag thin films; broadband response; Z-scan; nonlinear optical response
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Funding
- National Natural Science Foundation of China [11504072, 11704273]
- Natural Science Foundation of Heilongjiang Province [LH 2020F032, LH 2019A018]
- Key Laboratory for Photonic and Electronic Bandgap Material (Ministry of Education)
- School of Physics and Electronic Engineering of Harbin Normal University of China
- Natural Science Foundation of Jiangsu Province, China [BK20170375]
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Graphene/MoS2/Ag thin films were successfully prepared using magnetron sputtering and liquid phase exfoliation techniques. The increase in DC magnetron sputtering power led to enhanced local surface plasmon resonance effect of Ag thin films, resulting in improved nonlinear optical properties of the graphene/MoS2/Ag thin films.
Graphene/MoS2/Ag thin films were successfully prepared by the magnetron sputtering technique and liquid phase exfoliation. Structure, morphology, optical properties, and nonlinear optical characteristics of the graphene/MoS2/Ag and graphene/MoS2 thin films were studied by X-ray diffractometer, spectrophotometer, field-scanning electron microscope, and femtosecond (fs) Z-scan technique. The results of the fs Z-scan experiment indicate that the graphene/MoS2/Ag thin films exhibit reverse saturable absorption properties due to the free carrier absorption and two-photon absorption. More importantly, with the increase of DC magnetron sputtering power (from 5 to 15 W), the local surface plasmon resonance effect of the Ag thin films increases, which leads to the enhancement of nonlinear optical properties of the graphene/MoS2/Ag thin films. The nonlinear absorption coefficients of the graphene/MoS2/Ag thin films are increased from 1.14 x 10(-10) to 1.8 x 10(-10) m/W at 800 nm and from 4.79 x 10(-11) to 6.79 x 10(-11) m/W at 1,030 nm, and the nonlinear refraction index of the graphene/MoS2/Ag thin films is -4.37 x 10(-17)similar to-4.18 x 10(-16) m(2)/W under the excitation of 800 and 1,030 nm, respectively. Moreover, when the graphene/MoS2/Ag thin films were excited at 800 and 1,030 nm, respectively, the nonlinear figure of merit values of the graphene/MoS2/Ag thin films are increased from 1.23 to 2.91 and from 1.30 to 1.47, which are enough to support the application of the graphene/MoS2/Ag thin films in the field of all-optical switching applications.
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