Journal
SCIENCE ADVANCES
Volume 7, Issue 31, Pages -Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.abf5011
Keywords
-
Categories
Funding
- National Key Research and Development Program of China [2019YFA0708202, 2016YFB0400102, 2017YFB0403101]
- National Natural Science Foundation of China [61974140, 61604140, 11974023]
- Youth Supporting Program of Institute of Semiconductors
Ask authors/readers for more resources
A novel nanorod-assisted van der Waals epitaxy method has been developed, allowing for the growth of nearly single-crystalline GaN films on amorphous silica glass substrates. This approach enables the growth and lifting off of GaN-based light-emitting diodes with record internal quantum efficiency, and offers the potential for high-quality growth of nitrides on arbitrary substrates.
Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline substrate, we expect this approach to be equally applicable for high-quality growth of nitrides on arbitrary substrates. Our work provides a revolutionary technology for the growth of high-quality semiconductors, thus enabling the hetero-integration of highly mismatched material systems.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available