The Effect of RF Sputtering Temperature Conditions on the Structural and Physical Properties of Grown SbGaN Thin Film

By using a single ceramic SbGaN target containing a 14% Sb dopant, Sb0.14GaN films were successfully grown on n-Si(100), SiO2/Si(100), and quartz substrates by an RF reactive sputtering technology at different growth temperatures, ranging from 100 to 400 degrees C. As a result, the structural characteristics, and optical and electrical properties of the deposited Sb0.14GaN films were affected by the various substrate temperature conditions. By heating the temperature deposition differently, the sputtered Sb0.14GaN films had a wurtzite crystal structure with a preferential (101 over bar 0) plane, and these Sb0.14GaN films experienced a structural distortion and exhibited p-type layers. At the highest depositing temperature of 400 degrees C, the Sb0.14GaN film had the smallest bandgap energy of 2.78 eV, and the highest hole concentration of 8.97 x 10(16) cm(-3), a conductivity of 2.1 Scm(-1), and a high electrical mobility of 146 cm(2)V(-1)s(-1). The p-Sb0.14GaN/n-Si heterojunction diode was tested at different temperatures, ranging from 25 to 150 degrees C. The testing data showed that the change of testing temperature affected the electrical characteristics of the diode.

Automated summary

By using RF reactive sputtering technology, Sb0.14GaN films were successfully grown on different substrates at various temperatures, leading to structural and property changes in the deposited films. The highest deposition temperature resulted in the Sb0.14GaN film with the smallest bandgap and highest hole concentration. Testing of the p-Sb0.14GaN/n-Si heterojunction diode at different temperatures showed temperature variation affecting the electrical characteristics of the diode.