4.6 Article

Pulsed Laser Deposition of Epitaxial Non-Doped PbTiO3 Thin Films from PbO-TiO2 Mosaic Targets

Journal

COATINGS
Volume 11, Issue 6, Pages -

Publisher

MDPI
DOI: 10.3390/coatings11060662

Keywords

pulsed laser deposition; ferroelectric material; lead titanate; mosaic target; sequential ablation; compositional self-control mechanism

Funding

  1. Spanish Ministry of Competitiveness [MAT2016-77100-C2-1-P, PID2019-108573GB-C21]
  2. AGAUR agency [2017SGR]
  3. CERCA programme/Generalitat de Catalunya
  4. Severo Ochoa programme of the Spanish Ministry of Economy, Industry and Competitiveness (MINECO) [SEV-2017-0706]

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In this study, non-doped PbTiO3 thin films were prepared using pulsed laser deposition, and it was found that using a PbO-TiO2 pie-chart target resulted in high-quality films with composition, crystallinity, flatness, and ferroelectric properties almost independent of the areal ratio.
PbTiO3 (PTO) suffers from difficulty in preparing high-density robust bulk ceramics, which in turn has been a bottleneck in thin films growth with physical vapor deposition (PVD) methods. In the present work, we prepared non-doped PTO thin films by a pulsed laser deposition (PLD) method with either a single PTO target or a mosaic target consisting of PbO and TiO2 pie-shaped pieces. On the PTO single target, laser irradiation caused selective ablation of Pb, resulting in Ti-rich cone-shaped pillar structure on the surface, whereas the irradiated surface of PbO and TiO2 pieces was smoother. Epitaxial PTO films deposited on SrTiO3 (001) substrates from the pie-chart targets with PbO:TiO2 areal ratio from 3:5 to 5:3 resulted in composition, crystallinity, flatness, and ferroelectric properties almost independent of the areal ratio. The averaged composition of each film was close to stoichiometric, suggesting a compositional self-control mechanism. For growing epitaxial and high-quality non-doped PTO films, a PbO-TiO2 pie-chart target is advantageous in easiness of handling and stable surface structure.

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