Improved optical and electrical properties for heterojunction solar cell using Al2O3/ITO double-layer anti-reflective coating

Silicon heterojunction solar cells have been gaining remarkable attention in the photovoltaic industry in recent years owing to their low temperature coefficient and high efficiency. This study aimed to maximize the short circuit current density (J(sc)), which is directly correlated with the absorbance of the solar cells. An advanced ray tracking model and hall effect measurement was used to improve the optical properties of Al2O3/ITO as a double-layered anti-reflection coating (DLARC) on the solar cell. RF/DC power sputtering system was used to deposit ITO layer, while atomic layer deposition was used to deposit Al2O3 on ITO to create a DLARC. An average decrease in reflection from 9.33% to 4.74% and enhancement in EQE from 76.89% to 84.34% were observed for the DLARC in the wavelength spectrum at 300-1100 nm. It also exhibited a higher J(sc) value of 41.13 mA/cm(2) and maximum conversion efficiency of 21.6%. The findings of both simulation and experiments showed that the Al2O3/ITO DLARC has better anti-reflection properties than a single-layer ITO coating.

Automated summary

This study aimed to improve the optical properties of Al2O3/ITO double-layered anti-reflection coating on silicon heterojunction solar cells, resulting in decreased reflection and increased EQE. The findings showed that the DLARC had better anti-reflection properties and higher J(sc) value compared to a single-layer ITO coating.