Related references
Note: Only part of the references are listed.Switching Transient Analysis for Normally-OFF GaN Transistor With p-GaN Gate in a Phase-Leg Circuit
Ruiliang Xie et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2019)
Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs
Loizos Efthymiou et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic ON-Resistance in GaN HEMTs
Fei Yang et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2019)
Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit
A. Mohanbabu et al.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS (2018)
Mechanism of Threshold Voltage Shift in p-GaN Gate AlGaN/GaN Transistors
Xi Tang et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
Luca Sayadi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Comparison of SiC MOSFET-based and GaN HEMT-based high-efficiency high-power-density 7.2kW EV battery chargers
Allan Taylor et al.
IET POWER ELECTRONICS (2018)
V-TH Instability of p-GaN Gate HEMTs Under Static and Dynamic Gate Stress
Jiabei He et al.
IEEE ELECTRON DEVICE LETTERS (2018)
A Simple Plug-In Circuit for IGBT Gate Drivers to Monitor Device Aging Toward smart gate drivers
Syed Huzaif Ali et al.
IEEE POWER ELECTRONICS MAGAZINE (2018)
Efficient III-Nitride MIS-HEMT devices with high-k gate dielectric for high-power switching boost converter circuits
A. Mohanbabu et al.
SUPERLATTICES AND MICROSTRUCTURES (2017)
Dynamic Gate Stress-Induced VTH Shift and Its Impact on Dynamic RON in GaN MIS-HEMTs
Shu Yang et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Edward A. Jones et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2016)
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Yong Cai et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Recessed-gate enhancement-mode GaNHEMT with high threshold voltage
WB Lanford et al.
ELECTRONICS LETTERS (2005)