Related references
Note: Only part of the references are listed.Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization
Xiangdong Li et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Switching Transient Analysis for Normally-OFF GaN Transistor With p-GaN Gate in a Phase-Leg Circuit
Ruiliang Xie et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2019)
Carrier Transport Mechanisms Underlying the Bidirectional VTH Shift in p-GaN Gate HEMTs Under Forward Gate Stress
Yuanyuan Shi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p-GaN Gate HEMTs
Jin Wei et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs
Loizos Efthymiou et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p-GaN Gate HEMTs
Jiabei He et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Investigation of Dynamic IOFF Under Switching Operation in Schottky-Type p-GaN Gate HEMTs
Yuru Wang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress
M. Ruzzarin et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on Delta V-TH and Underlying Degradation Mechanisms
Andrea Natale Tallarico et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
V-TH Instability of p-GaN Gate HEMTs Under Static and Dynamic Gate Stress
Jiabei He et al.
IEEE ELECTRON DEVICE LETTERS (2018)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
Hanxing Wang et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2017)
Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors
Kyu Sang Kim
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
Sen Huang et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
Finella Lee et al.
IEEE ELECTRON DEVICE LETTERS (2015)
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
Injun Hwang et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
Kevin J. Chen et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2011)
AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications
Tohru Oka et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation
Yasuhiro Uemoto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
A closed-form model of the drain-voltage dependence of the OFF-state channel electric field in a HEMT with a field plate
Shreepad Karmalkar et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Y Cai et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface
T Hashizume
JOURNAL OF APPLIED PHYSICS (2003)
Share Paper
