4.6 Article

Impact of Long-Term Annealing on Photoluminescence from Ge1-xSnx Alloys

Journal

CRYSTALS
Volume 11, Issue 8, Pages -

Publisher

MDPI
DOI: 10.3390/cryst11080905

Keywords

germanium tin; annealing; direct and indirect optical transition; strain engineering

Funding

  1. Multidisciplinary University Research Initiative (MURI) Program through U.S. Air Force Office of Scientific Research (AFOSR) [FA9550-19-1-0341]

Ask authors/readers for more resources

This study explores the correlation between strain, composition, defect density, and photoluminescence in GeSn samples with Sn content between 8% to 10%, before and after annealing at 300 degrees C. The results demonstrate how annealing affects strain levels, energy separations between optical transitions, and the density of dislocations and surface roughness. Annealing is observed to decrease the energy separation between indirect and direct optical transitions, leading to an increase in photoluminescence, while also increasing the density of dislocations and surface roughness, resulting in a decrease in photoluminescence intensity.
We report on the connection between strain, composition, defect density and the photoluminescence observed before and after annealing at 300 degrees C for GeSn samples with Sn content of 8% to 10%. Results show how the composition and level of strain influenced the separation between the indirect and direct optical transitions, while changes in the level of strain also influenced the density of misfit dislocations and surface roughness. The effect of annealing is observed to lower the level of strain, decreasing the energy separation between the indirect and direct optical transitions, while also simultaneously increasing the density of misfit/threading dislocations and surface roughness. The reduction in energy separation leads to an increase of photoluminescence (PL) emission, while the increase of misfit/threading dislocations density and surface roughness results in a decrease of PL. Consequently, the competition between these factors is observed to determine the impact of annealing on the PL. As a result, annealing increases the collected PL for small (<= 40 meV) separation between the indirect to direct optical transitions in the as-grown sample while decreases the PL for larger (>= 60 meV) separations. More generally, these numbers have a small dependence on the level of strain in the as-grown samples.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available