Journal
APL MATERIALS
Volume 9, Issue 6, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0049488
Keywords
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Funding
- JSPS KAKENHI [19K15039]
- KAKENHI [15H05700]
- Ministry of Education, Culture, Sports, Science and Technology, Japan
- UK Engineering and Physical Sciences Research Council [EP/M011682/1]
- EPSRC [EP/M011682/1] Funding Source: UKRI
- Grants-in-Aid for Scientific Research [19K15039] Funding Source: KAKEN
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High-purity pulsed single-photon emission has been measured from an InGaN quantum dot, showing promising potential for application in quantum key distribution systems.
Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g((2))(0) value of 0.043 +/- 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems. (c) 2021 Author(s).
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