Bulk dissipation in the quantum anomalous Hall effect

Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb)(2)Te-3. We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development toward realization of the QAH effect at higher temperatures.

Automated summary

By comparing transport measurements of devices fabricated from Cr-doped (BiSb)(2)Te-3, it was found that bulk conduction is the dominant source of dissipation at all temperatures and electric field values, and the breakdown of the QAH phase is a bulk process. This methodology can be used to identify dissipative conduction mechanisms in new QAH materials for achieving the QAH effect at higher temperatures.