4.8 Article

Enhanced Efficiency and Stability of All-Inorganic CsPbI2Br Perovskite Solar Cells by Organic and Ionic Mixed Passivation

Journal

ADVANCED SCIENCE
Volume 8, Issue 17, Pages -

Publisher

WILEY
DOI: 10.1002/advs.202101367

Keywords

CsBr; CsPbI2Br; high efficiency; mixed passivation; PEABr; perovskite solar cells; stability

Funding

  1. National Natural Science Foundation of China [61704131, 61804111]
  2. National Key Research and Development Program of China [2018YFB2202900]
  3. Key Research and Development Program of Shaanxi Province [2020GY-310]
  4. 111 Project [B12026]
  5. Fundamental Research Funds for the Central Universities

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The study investigates the effects of mixed passivation on all-inorganic perovskite (CsPbI2Br) solar cells for the first time, resulting in improved film quality and energy level alignment. The passivation enhances hole extraction, drives interface electron separation, suppresses charge recombination, and achieves a high open-circuit voltage and fill factor in the devices. Moreover, the treated devices exhibit remarkable long-term stability with minimal efficiency loss after storage in a glove box for over 1000 hours without encapsulation.
All-inorganic perovskites have been intensively investigated as potential optoelectronic materials because of their excellent thermal stability, especially for CsPbI2Br. Herein, the authors studied the effects of mixed passivation utilizing organic phenylethylammonium bromide and inorganic ionic cesium bromide (PEABr + CsBr) on the all-inorganic perovskite (CsPbI2Br) solar cells for the first time. The treatment with different passivation mechanisms enhances the perovskite film quality, resulting in uniform surface morphology and compact film with low trap density. Besides, the passivation improves the energy level alignment, which benefits the hole extraction at the perovskite/HTL interface and drives the interface electron separation, suppressing the charge recombination and realizing a high open-circuit voltage (V-oc). Finally, the device represents a high power conversion efficiency (PCE) of 16.70%, a V-oc of 1.30 V, and an excellent fill factor (FF) of 0.82. The V-oc loss and high FF should be among the best values for CsPbI2Br based devices. Furthermore, the treated devices exhibit remarkable long-term stability with only 8% PCE loss after storing in a glove box for more than 1000 h without encapsulation.

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