Related references
Note: Only part of the references are listed.Tuning the electromechanical properties and polarization of Aluminium Nitride by ion beam-induced point defects
Holger Fiedler et al.
ACTA MATERIALIA (2021)
Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering
Holger Fiedler et al.
APPLIED PHYSICS LETTERS (2021)
The effect of low energy helium implantation on the structural, vibrational, and piezoelectric properties of AlN thin films
V. Sharma et al.
PHYSICA B-CONDENSED MATTER (2021)
Noble gas as a functional dopant in ZnO
Oleksandr Malyi et al.
NPJ COMPUTATIONAL MATERIALS (2019)
Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy
Kanako Shojiki et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
pyiron: An integrated development environment for computational materials science
Jan Janssen et al.
COMPUTATIONAL MATERIALS SCIENCE (2019)
Temperature dependent He-enhanced damage and strain in He-implanted AlN
S. Jublot-Leclerc et al.
JOURNAL OF NUCLEAR MATERIALS (2019)
Effects of lattice parameters on piezoelectric constants in wurtzite materials: A theoretical study using first-principles and statistical-learning methods
Hiroyoshi Momida et al.
APPLIED PHYSICS EXPRESS (2018)
Crystal damage analysis of implanted AlxGa1-xN (0 ≤ x ≤ 1) by ion beam techniques
D. Nd. Faye et al.
SURFACE & COATINGS TECHNOLOGY (2018)
Isotopic Heft on the B1/ Silent Mode in Ultra-Narrow Gallium Nitride Nanowires
Carlos Rodriguez-Fernandez et al.
NANO LETTERS (2018)
28Si+ ion beams from Penning ion source based implanter systems for near-surface isotopic purification of silicon
Holger Fiedler et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2018)
The atomic simulation environment-a Python library for working with atoms
Ask Hjorth Larsen et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2017)
Electrostatic-free piezoresponse force microscopy
Sungho Kim et al.
SCIENTIFIC REPORTS (2017)
First-principles Green's-function method for surface calculations: A pseudopotential localized basis set approach
Soren Smidstrup et al.
PHYSICAL REVIEW B (2017)
Giant increase in piezoelectric coefficient of AlN by Mg-Nb simultaneous addition and multiple chemical states of Nb
Masato Uehara et al.
APPLIED PHYSICS LETTERS (2017)
Mechanism of damage buildup in ion bombarded ZnO
A. Turos et al.
ACTA MATERIALIA (2017)
Self-assembly of magnetic nanoclusters in diamond-like carbon by diffusion processes enhanced by collision cascades
P. Gupta et al.
APPLIED PHYSICS LETTERS (2017)
Implantation damage formation in a-, c- and m-plane GaN
K. Lorenz et al.
ACTA MATERIALIA (2017)
Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
D. Nd. Faye et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2016)
Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material
D. Nilsson et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Resonant Raman scattering study of V, Cr and Co ions implanted into GaN
Abdul Majid et al.
RSC ADVANCES (2016)
Highly Piezoelectric Co-Doped AlN Thin Films for Wideband FBAR Applications
Tsuyoshi Yokoyama et al.
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL (2015)
Piezoelectric coefficients and spontaneous polarization of ScAlN
Miguel A. Caro et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2015)
Precise lattice location of substitutional and interstitial Mg in AlN
L. M. Amorim et al.
APPLIED PHYSICS LETTERS (2013)
Evidence of N substitution by Mn in GaN
L. M. C. Pereira et al.
PHYSICAL REVIEW B (2012)
Gwyddion: an open-source software for SPM data analysis
David Necas et al.
CENTRAL EUROPEAN JOURNAL OF PHYSICS (2012)
Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
Shibo Yang et al.
APPLIED PHYSICS EXPRESS (2011)
VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data
Koichi Momma et al.
JOURNAL OF APPLIED CRYSTALLOGRAPHY (2011)
Visualization and analysis of atomistic simulation data with OVITO-the Open Visualization Tool
Alexander Stukowski
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING (2010)
Origin of the Anomalous Piezoelectric Response in Wurtzite ScxAl1-xN Alloys
Ferenc Tasnadi et al.
PHYSICAL REVIEW LETTERS (2010)
Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering
Morito Akiyama et al.
ADVANCED MATERIALS (2009)
Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films
Morito Akiyama et al.
APPLIED PHYSICS LETTERS (2009)
Group-IV and V ion implantation into nanomaterials and elemental analysis on the nanometre scale
Andreas Markwitz et al.
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY (2009)
Vibration energy harvesting with aluminum nitride-based piezoelectric devices
R. Elfrink et al.
JOURNAL OF MICROMECHANICS AND MICROENGINEERING (2009)
Piezoelectric MEMS sensors: state-of-the-art and perspectives
S. Tadigadapa et al.
MEASUREMENT SCIENCE AND TECHNOLOGY (2009)
Mechanisms of damage formation in semiconductors
E. Wendler
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2009)
X-ray diffraction of III-nitrides
M. A. Moram et al.
REPORTS ON PROGRESS IN PHYSICS (2009)
Ion fluence dependence of the Si sputtering yield by noble gas ion bombardment
A. Mutzke et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2008)
Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films
J. Kennedy et al.
JOURNAL OF ELECTRONIC MATERIALS (2007)
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu et al.
NATURE (2006)
Optical doping of AlN by rare earth implantation
K Lorenz et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2006)
Scripting-customised microscopy tools for Digital MicrographTM
DRG Mitchell et al.
ULTRAMICROSCOPY (2005)
Silent Raman modes in zinc oxide and related nitrides -: art. no. 053516
FJ Manjón et al.
JOURNAL OF APPLIED PHYSICS (2005)
Wet etching of GaN, AIN, and SiC: a review
D Zhuang et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2005)
Band parameters for nitrogen-containing semiconductors
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2003)
Ion-beam-produced damage and its stability in AlN films
SO Kucheyev et al.
JOURNAL OF APPLIED PHYSICS (2002)
Lattice parameters of aluminium nitride in the range 10-291 K
W Paszkowicz et al.
ACTA PHYSICA POLONICA A (2002)
Vibrational properties of AlN grown on (111)-oriented silicon
T Prokofyeva et al.
PHYSICAL REVIEW B (2001)
Undoped AlGaN/GaN HEMTs for microwave power amplification
LF Eastman et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
Oscillations of sputtering yield
W Eckstein
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2000)
Berry-phase theory of proper piezoelectric response
D Vanderbilt
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2000)
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
C Ronning et al.
JOURNAL OF APPLIED PHYSICS (2000)