Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode

An understanding of the spin-transport properties in semiconductor barriers is essential to improve the performance of spin-polarized light-emitting diodes (spin LEDs) for future optospintronics integration in information processing. Here, we report on the temperature and bias-voltage dependence of spin-transport properties in an In0.5Ga0.5As quantum dot (QD) spin LED using a combination of spin-dependent electroluminescence (EL) and time-resolved photoluminescence. The QD EL spin polarization increases with an increase in temperature above 125 K; this is attributed to the improved conversion efficiency from spin polarization of electrons to circular polarization of photons of the QDs. We find that both the electric field and temperature can enhance spin relaxation in the undoped GaAs barrier above 200 K. At 298 K, the QD EL spin polarization decreases beyond 2.5 V; this is attributed to the enhanced D'yakonov Perel' spin relaxation in the undoped GaAs barrier caused by the increase in electron temperature. This study provides valuable insights into the spin-relaxation mechanism in the semiconductor barrier during the room-temperature operation of the QD spin LED.

Automated summary

The spin-transport properties in an In0.5Ga0.5As quantum dot (QD) spin LED are affected by temperature and bias voltage, influencing spin polarization and spin relaxation. Spin polarization increases with temperature, but may decrease at higher temperatures and voltages. The electric field and temperature can enhance spin relaxation in the undoped GaAs barrier.