Journal
NANOMATERIALS
Volume 11, Issue 9, Pages -Publisher
MDPI
DOI: 10.3390/nano11092302
Keywords
quantum dots; near-infrared photodetection; photon-trapping nanostructures; telecom
Categories
Funding
- Russian Science Foundation [19-12-00070]
- Russian Science Foundation [19-12-00070] Funding Source: Russian Science Foundation
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The fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures were reported, showing significantly enhanced responsivity due to the photon-trapping effect. The results make micro/nanohole Ge/Si QD photodiodes promising for remote infrared photodetection applications across a wide wavelength range.
Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 mu m on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at lambda=1.2 mu m and by 34 times at lambda approximate to 1.6 mu m relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260-1360 nm) up to the L-band (1565-1625 nm).
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