Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

Automated summary

The study demonstrates highly controllable self-catalyzed growth of gallium phosphide (GaP) nanowires on template-free silicon substrates, achieving a high yield of vertical GaP nanowires with control over surface density. The approach also allows for independent control of GaP nanowire length and diameter, providing a new method for designing photonic and electronic devices at the nanoscale.