Journal
NANOMATERIALS
Volume 11, Issue 8, Pages -Publisher
MDPI
DOI: 10.3390/nano11081965
Keywords
molecular dynamics; monocrystalline silicon; mechanical anisotropy; point defect
Categories
Funding
- National Science Foundation for Distinguished Young Scholars of China [11802112]
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The mechanical performance of silicon wafers in different orientations under the influence of point defects was systematically investigated through molecular dynamics methods. Anisotropic mechanical behavior with fracture phenomena was observed in monocrystalline silicon during uniaxial deformation, with exponential reduction in properties like yield strength and elastic strain energy release caused by point defects.
Mechanical anisotropy and point defects would greatly affect the product quality while producing silicon wafers via diamond-wire cutting. For three major orientations concerned in wafer production, their mechanical performances under the nanoscale effects of a point defect were systematically investigated through molecular dynamics methods. The results indicated anisotropic mechanical performance with fracture phenomena in the uniaxial deformation process of monocrystalline silicon. Exponential reduction caused by the point defect has been demonstrated for some properties like yield strength and elastic strain energy release. Dislocation analysis suggested that the slip of dislocations appeared and created hexagonal diamond structures with stacking faults in the [100] orientation. Meanwhile, no dislocation was observed in [110] and [111] orientations. Visualization of atomic stress proved that the extreme stress regions of the simulation models exhibited different geometric and numerical characteristics due to the mechanical anisotropy. Moreover, the regional evolution of stress concentration and crystal fracture were interrelated and mutually promoted. This article contributes to the research towards the mechanical and fracture anisotropy of monocrystalline silicon.
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