Journal
ADVANCED MATERIALS INTERFACES
Volume 8, Issue 12, Pages -Publisher
WILEY
DOI: 10.1002/admi.202100728
Keywords
high‐ κ oxide dielectrics; inkjet printing; printed electronics; solution‐ processed oxides; thin‐ film transistors
Funding
- Academy of Finland [305450, 328627]
- Walmart Manufacturing Innovation Foundation [29955421]
- US National Science Foundation [CBET 1449383]
- Academy of Finland (AKA) [305450, 328627, 305450, 328627] Funding Source: Academy of Finland (AKA)
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Additive solution process patterning, such as inkjet printing, is used to fabricate thin-film transistors with high mobility. The study explores the impact of annealing temperature on capacitance stability and highlights the importance of low-frequency capacitance characterization for solution-processed dielectrics.
Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2-xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (mu(sat)) of approximate to 1 cm(2) V-1 s(-1) at a low 3 V operating voltage. When the dielectric material is annealed at 350 degrees C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 degrees C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.
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