Journal
ADVANCED MATERIALS INTERFACES
Volume 8, Issue 14, Pages -Publisher
WILEY
DOI: 10.1002/admi.202100593
Keywords
gallium nitride; high operating temperature; low operating temperature; photodetectors; spectral response
Funding
- Australian Research Council [LE150100001]
- Joint RMIT-AcSIR Ph.D. scholarship program
- Australian Research Council [LE150100001] Funding Source: Australian Research Council
Ask authors/readers for more resources
This study presents a stable, broadband photodetector using epitaxial honeycomb nanostructured GaN film that can operate in harsh conditions and cover UV to near-infrared spectrum. The photodetector demonstrates peak responsivity and external quantum efficiency of 2.41 x 10(6) AW(-1) and 8.18 x 10(8) %, respectively, at 365 nm wavelength. Temperature-correlated spectral response shows quenching of responsivity at higher temperatures in visible spectrum due to thermal effects.
Broadband photodetectors operable under harsh temperature conditions are crucial optoelectronic components to support ongoing and futuristic technological advancement. Conventional photodetectors are limited to room temperature operation due to the thermal instability of semiconductors under harsh conditions and incapable of covering the ultraviolet (UV) spectrum due to narrow bandgap properties. Gallium nitride (GaN) is a wide bandgap and thermally stable semiconductor, ideal for addressing the abovementioned limitations. Here, epitaxial honeycomb nanostructured GaN film is grown via a plasma-assisted molecular beam epitaxy system and deployed for stable broadband photodetectors, which can be operated from -75 to 250 degrees C. Further, spectral response is investigated for a broad spectrum from UV (280 nm) to near-infrared (850 nm) region. It displays a peak responsivity at 365 nm associated to the bandgap energy of GaN. Fabricated photodetectors with honeycomb-like nanostructures drive peak responsivity and external quantum efficiency of 2.41 x 10(6) AW(-1) and 8.18 x 10(8) %, respectively, when illuminated at a power density of 1 mWcm(-2) and 365 nm wavelength source under 1 V bias. Temperature-correlated spectral response presents a quenching of responsivity at higher temperatures in visible spectrum associated with the thermal quenching of defect states. The thermally stable and efficient broadband photodetector based on honeycomb-like nanostructured GaN is promising for the combustion industry, arctic science, and space explorations.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available