4.6 Article

2D MoTe2/ReS2 van der Waals Heterostructure for High-Performance and Linear Polarization-Sensitive Photodetector

Journal

ACS PHOTONICS
Volume 8, Issue 9, Pages 2650-2658

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.1c00598

Keywords

2D van der Waals heterostructure; MoTe2; ReS2; photodiode; linearly polarized photodetection

Funding

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2020R1A6A3A01100165]
  2. Technology Innovation Program - Korean Ministry of Trade, Industry and Energy [20012502]
  3. Korea Institute of Science and Technology (KIST) Institution Program [2E31011, 2E31012]
  4. Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2021M3D1A2046731]

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In this study, a MoTe2/ReS2 heterostructure was proposed for a high performance photodiode with linearly polarized photodetection function. The optical properties and energy band diagram of this heterostructure were investigated through spectroscopy measurements, showing a rectification ratio of 10(4), a broad spectral response up to 1310 nm, a responsivity of 0.54 A/W, and rapid photoswitching with a cutoff frequency exceeding 100 kHz. Additionally, the photodiode demonstrated linear polarization dependent characteristics due to the asymmetric crystal structure of ReS2.
van der Waals (vdW) heterostructures based on two-dimensional (2D) atomic crystal materials are fascinating platforms for fundamental studies and device applications. In this study, we suggest the 2D MoTe2/ReS2 heterostructure for a high performance photodiode with an additional function of linearly polarized photodetection. The optical properties and energy band diagram of this heterostructure, which can be directly correlated with photodetection, are investigated by microabsorption and photoemission spectroscopy measurements. The photodiode shows ideality factor of 1.3, a rectification ratio of 10(4), broad spectral response up to near-infrared light of 1310 nm, relatively high responsivity of 0.54 A/W (under 638 nm red light illumination and photoconductive mode), and excellent linearity (alpha = 0.94). In addition, rapid photoswitching with a cutoff (3 dB) frequency exceeding 100 kHz is observed. Finally, beyond conventional photodetection, this photodiode demonstrates linear polarization dependent characteristics due to asymmetric crystal structure of ReS2. Our results can serve as a basis for the further development of novel functional optoelectronic applications based on 2D vdW heterostructures.

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