Related references
Note: Only part of the references are listed.Combined experimental-FEM investigation of electrical ruggedness in double-sided cooled power modules
Ciro Scognamillo et al.
MICROELECTRONICS RELIABILITY (2020)
A comparative study of a deep-trench superjunction SiC VDMOS device
Shengdong Hu et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2019)
An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS
Tao Liu et al.
IEEE ACCESS (2019)
Investigation of SiC trench MOSFET with floating islands
Song Qingwen et al.
IET POWER ELECTRONICS (2016)
Efficiency comparison between Si and SiC-based implementations in a high gain DC-DC boost converter
Antonio Leon-Masich et al.
IET POWER ELECTRONICS (2015)
A Survey of Wide Bandgap Power Semiconductor Devices
Jose Millan et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2014)
A novel trench gate floating islands power MOSFET (TG-FLIMOSFET): Two-dimensional simulation study
Rakesh Vaid et al.
MICROELECTRONIC ENGINEERING (2011)
A Novel Charge-Imbalance Termination for Trench Superjunction VDMOS
Qinsong Qian et al.
IEEE ELECTRON DEVICE LETTERS (2010)
A 1-kV 4H-SiC power DMOSFET optimized for low ON-resistance
Asmita Saha et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
A self-aligned process for high-voltage, short-channel vertical DMOSFETs in 4H-SiC
M Matin et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2004)
Share Paper
