4.6 Review

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Journal

MICROMACHINES
Volume 12, Issue 8, Pages -

Publisher

MDPI
DOI: 10.3390/mi12080946

Keywords

heterogeneous integration; wafer bonding; thin-film transfer; System-in-Package (SiP); sensor; 5G; 6G; photonics; power electronics; Internet of Thing (IoT); Artificial Intelligence of Thing (AIoT); wearable electronics

Funding

  1. National Key Research and Development Program of China at NUSRI, Suzhou, China [2019YFB2004800, R-2020-S-002]
  2. NRF CRP [NRF-CRP15-2015-02]
  3. ARTIC Project [R-261-518-009-720]
  4. RIE 2020 Project at NUS [A18A4b0055]

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Wafer bonding technology is an effective method for transferring high-quality thin films onto different substrates, with applications in various fields such as electronics, optical devices, and wearable sensors. The technique has shown promising results in fabricating advanced materials for next-generation applications beyond 5G, including power electronics, molecular sensors, and high-speed modulators. Additionally, wafer bonding technology has great potential in the development of flexible composite structures for wearable electronics.
Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart Cut(TM) process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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