Related references
Note: Only part of the references are listed.Effect of Moisture Stress on the Resistance of HfO2/TaOx-Based 8-Layer 3D Vertical Resistive Random Access Memory
Rui Gao et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride
Nayan C. Das et al.
APPLIED SCIENCES-BASEL (2020)
Transition from rectification to resistive-switching in Ti/MgF2/Pt memory
Yi Sun et al.
AIP ADVANCES (2019)
Emerging Memory Devices for Neuromorphic Computing
Novnidhi K. Upadhyay et al.
ADVANCED MATERIALS TECHNOLOGIES (2019)
Glucose-based resistive random access memory for transient electronics
Sung Pyo Park et al.
JOURNAL OF INFORMATION DISPLAY (2019)
Film-Nanostructure-Controlled Inerasable-to-Erasable Switching Transition in ZnO-Based Transparent Memristor Devices: Sputtering-Pressure Dependency
Firman Mangasa Simanjuntak et al.
ACS APPLIED ELECTRONIC MATERIALS (2019)
Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx
Michael Luebben et al.
ADVANCED ELECTRONIC MATERIALS (2018)
HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study
Boubacar Traore et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Effects of moisture and redox reactions in VCM and ECM resistive switching memories
Ilia Valov et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Interface-type resistive switching in perovskite materials
S. Bagdzevicius et al.
JOURNAL OF ELECTROCERAMICS (2017)
Scalability of voltage-controlled filamentary and nanometallic resistance memory devices
Yang Lu et al.
NANOSCALE (2017)
A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure
Zhenni Wan et al.
APPLIED PHYSICS LETTERS (2017)
Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test
Yang Lu et al.
NANOSCALE (2016)
Biodegradable resistive switching memory based on magnesium difluoride
Zhiping Zhang et al.
NANOSCALE (2016)
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Ee Wah Lim et al.
ELECTRONICS (2015)
A Review on Conduction Mechanisms in Dielectric Films
Fu-Chien Chiu
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING (2014)
Abnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure
Xin-Cai Yuan et al.
NANOSCALE RESEARCH LETTERS (2014)
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
Yi-Jiun Chen et al.
NANOSCALE RESEARCH LETTERS (2014)
Effects of thickness on the structural, electronic, and optical properties of MgF2 thin films: The first-principles study
Li-ping Wang et al.
COMPUTATIONAL MATERIALS SCIENCE (2013)
TaO x -based resistive switching memories: prospective and challenges
Amit Prakash et al.
NANOSCALE RESEARCH LETTERS (2013)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
An overview of resistive random access memory devices
Li YingTao et al.
CHINESE SCIENCE BULLETIN (2011)
HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
Z. Fang et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Low Reset Current in Stacked AlOx/WOx Resistive Switching Memory
Y. L. Song et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Comparative study of microwave and conventional methods for the preparation and optical properties of novel MgO-micro and nano-structures
N. Clament Sagaya Selvam et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2011)
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
D. Ielmini et al.
JOURNAL OF APPLIED PHYSICS (2011)
Thermally formed conducting filaments in a single-crystalline NiO thin film
Masanori Kawai et al.
APPLIED PHYSICS LETTERS (2010)
Infrared Investigation of the Acid and Basic Properties of a Sol-Gel Prepared MgF2
Stefan Wutke et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2010)
Bipolar resistance switching in high-performance Cu/ZnO : Mn/Pt nonvolatile memories: active region and influence of Joule heating
Yu Chao Yang et al.
NEW JOURNAL OF PHYSICS (2010)
A Study on the Properties of MgF2 Antireflection Film for Solar Cells
Hyeon-Hun Yang et al.
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS (2010)
Electrode kinetics of Cu-SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
C. Schindler et al.
APPLIED PHYSICS LETTERS (2009)
Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
Xun Cao et al.
JOURNAL OF APPLIED PHYSICS (2009)
Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
Doo Seok Jeong et al.
JOURNAL OF APPLIED PHYSICS (2008)
Memristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2008)
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
I. H. Inoue et al.
PHYSICAL REVIEW B (2008)
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
Chih-Yang Lin et al.
JOURNAL OF APPLIED PHYSICS (2007)
Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory
Markus Janousch et al.
ADVANCED MATERIALS (2007)
Study of a novel ALD process for depositing MgF2 thin films
Tero Pilvi et al.
JOURNAL OF MATERIALS CHEMISTRY (2007)
Electrical conduction mechanisms of metal/La2O3/Si structure -: art. no. 103503
FC Chiu et al.
JOURNAL OF APPLIED PHYSICS (2005)
Characterization of magnesium fluoride thin films deposited by direct electron beam evaporation
L Dumas et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS (2000)