Influence of Laser Modulation Frequency on the Performance of Terahertz Photoconductive Switches on Semi-Insulating GaAs Exhibiting Negative Differential Conductance

In typicalterahertz time-domain spectroscopy systems, the use of the lock-in technique is necessary because of the low current induced at the receiver so that the laser pump beam must be modulated (chopped) at a frequency much lower than the laser repetition rate. This work shows that, in the case of semi-insulating GaAs (SI-GaAs) antennas, this modulation has an important effect on the antenna current and consequently, on the radiated electromagnetic pulse. There exists a threshold bias (whose value depends on the chopping frequency) where an abrupt increase in the current and consequently, in the terahertz emission takes place. The calculated energy of the pulse below and above the threshold shows that the energy doubles. The exact bias voltage at which this occurs changes with the laser modulation frequency when this is below 350 Hz, but at higher frequencies, the threshold remains almost constant. The experiments show that the responsibility for this behavior is the S-shape negative differential conductance exhibited by SI-GaAs originated by a slow field-enhanced charge trapping mechanism, which is also an important source of noise at the receiver of the system.

Automated summary

In the context of using semi-insulating GaAs (SI-GaAs) antennas, the modulation of the laser pump beam has a significant impact on the antenna current and the radiated electromagnetic pulse, leading to an increase in terahertz emission. The threshold bias results in a doubling of current and pulse energy, with the exact bias voltage changing with laser modulation frequency below 350 Hz but remaining constant at higher frequencies.