Non-Linearity and RF Intermodulation Distortion Check of Ultrascale GNRFET Device Using NEGF Technique to Achieve the Highest Reliable Performance

The non-linearity and radio-frequency (RF) intermodulation distortion in ultrascale graphene-nanoribbon-field-effect-transistor (GNRFETs) is reported. The important figure of merits related to the non-linearity and the RF distortion in terms of transconductance, high-order harmonics, VIP2, VIP3, IIP3, IMD3 and 1-dB compression point have been explored to evaluate the power of ultrascale GNRFET device in RF high-performance applications. Also, the RF important parameters in the cases of total capacitance, cut-off frequency, and transconductance frequency product have been monitored. This paper presents a useful manual to improve the GNRFET RF performance while maintaining high reliability. The influence of the structural parameters of GNRFET device, such as the gate length, gate oxide thickness, gate oxide material, and GNR index on the RF parameters and non-linearity/RF intermodulation distortion have been investigated in order to determine the best setup for the ultrascale GNRFET device applicable in RF applications. The paper benefits from the numerical approach governed by a nonequilibrium-green-function coupled by a three-dimensional Poisson equation in a self-consistent manner. Also, because the ultrascale GNRFET (gate length smaller than 7.5 nm) has been analyzed, the position-energy dependent effective mass model is considered for more accurate simulation.

Automated summary

This paper reports on the non-linearity and radio-frequency intermodulation distortion in ultrascale graphene-nanoribbon-field-effect-transistors (GNRFETs), exploring important figure of merits and parameters to evaluate power and performance in RF applications. Structural parameters and numerical approaches are investigated to determine the best setup for ultrascale GNRFET device applicable in RF applications, benefiting from a self-consistent manner and accurate simulation models.