Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 10, Issue 8, Pages -Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/ac175c
Keywords
RRAM; Resistive memory; HfO2; hafnium oxide; Memory array; Neuromorphic applications
Funding
- Spanish Ministry of Science, Innovation and Universities [TEC2017-84321-C4-2-R]
- Deutsche Forschungsgemeinschaft (German Research Foundation) [434 434 223-SFB1461]
- Federal Ministry of Education and Research of Germany [16ES1002]
- Feder funds
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The study showed that thin layers of amorphous hafnium oxide are suitable for manufacturing RRAM memories, which are good candidates for replacing flash memories, and exhibit excellent multilevel capabilities and resistive-switching behavior.
The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile character. They are particularly appealing as they are good candidates for substituting flash memories. In this work, the performance of the MIM structure that takes part of a 4 kbit memory array based on 1-transistor-1-resistance (1T1R) cells was studied in terms of control of intermediate states and cycle durability. DC and small signal experiments were carried out in order to fully characterize the devices, which presented excellent multilevel capabilities and resistive-switching behavior.
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