Analytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET

This paper presents an analytical investigation of the drain current model for symmetric short channel InGaAs gate-all-around (GAA) MOSFETs valid from depletion to strong inversion using a continuous expression. The development of the core model is facilitated by the solution of the quasi-2D Poisson equation in the doped channel, accounting for interface trap defects and fixed oxide charges. Correction to short channel effects such as threshold voltage roll-off, drain induced barrier lowering, and subthreshold slope degradation is later introduced, complemented with channel length modulation, velocity saturation, and mobility degradation from surface roughness, leading to accurate mobile charge density for electrostatic capacitance-voltage and transport characterization. The effect of physical process parameters such as fin width, oxide thickness, and channel length scaling is thoroughly investigated in both on and off states of the transistor. The robustness of the model is reflected by the precise match with published experimental reports in the literature. An R-on of 1160 Omega mu m is obtained from output characteristics and a switching efficiency improvement of 2.5 times is estimated by incorporating a high-kappa dielectric into the GAA transistor. Numerical 3D simulations from TCAD corroborate the validity of the proposed model in all regions of operation.

Automated summary

This paper presents an analytical investigation of the drain current model for symmetric short channel InGaAs gate-all-around (GAA) MOSFETs valid from depletion to strong inversion using a continuous expression. The core model development is facilitated by solving the quasi-2D Poisson equation in the doped channel, accounting for interface trap defects and fixed oxide charges.