Journal
SCIENTIFIC REPORTS
Volume 11, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41598-021-98266-4
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Funding
- Japan Society for Promotion of Science (JSPS) KAKENHI [19K15385, 26630139]
- NIMS Nanofabrication Platform Project
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
- Elemental Strategy Initiative by the MEXT, Japan [JPMXP0112101001]
- JSPS KAKENHI [JP20H00354]
- CREST, JST [JPMJCR15F3]
- NIMS
- Malaysia's Ministry of Higher Education (MOHE)
- UTM
- Grants-in-Aid for Scientific Research [19K15385, 26630139] Funding Source: KAKEN
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We report on the magnetotransport characteristics of a high-quality graphene device encapsulated in hexagonal boron nitride layers, showing an interplay of quantum interferences in Dirac materials at different temperatures. The elastic scattering mechanism in the hBN/Gr/hBN stacks contrasts with conventional graphene on SiO2, and our ultra-clean graphene device exhibits nonzero magnetoconductance at high temperatures up to 300 K.
We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > similar to 40 K, whereas it becomes positive for low temperatures <= similar to 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO2, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K.
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