Investigation of single-domain Au silicide nanowires on Si(110) formed for Au coverages in the monolayer regime

The self-organized formation of single domain Au silicide nanowires is observed on Si(110). These nanowires are analysed using scanning tunnelling microscopy (STM) and spectroscopy (STS) as well as photoemission spectroscopy (PES). Core-level PES is utilised to confirm the formation of Au silicide and establish its presence as the top most surface structure, i.e., the nanowires. The growth of the Au silicide nanowires and their dimensions are studied by STM. They form for Au coverages of about 1 monolayer and are characterized by widths of about 2 to 3 nm and heights below 1 nm while reaching lengths exceeding 500 nm when choosing appropriate annealing temperatures. Valence band PES and STS indicate a small but finite density of states at the Fermi level typical for compound metals.

Automated summary

The study investigates the self-organized formation of single domain Au silicide nanowires on Si(110), analyzing their growth and properties using STM, PES, and STS techniques. The formation conditions and structural characteristics of the Au silicide nanowires are identified, with widths of about 2 to 3 nm and heights below 1 nm when grown at appropriate annealing temperatures.