Journal
SCIENTIFIC REPORTS
Volume 11, Issue 1, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/s41598-021-90547-2
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Funding
- JST/PRESTO [JPMJPR152C, 15655293]
- JSPS KAKENHI [17K06784]
- Hoso Bunka Foundation
- Grants-in-Aid for Scientific Research [17K06784] Funding Source: KAKEN
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The (Bi0.41La0.59)(Fe0.75Co0.25)O-3 films fabricated using pulsed DC sputtering technique demonstrated magnetization reversal by applied electric field, exhibiting hysteresis curves of both ferromagnetic and ferroelectric behavior. The analysis of electric and magnetic domain structures induced by applying a local electric field showed the potential for future high performance magnetic devices with low power consumption.
(Bi1-xLax)(Fe,Co)O-3 multiferroic magnetic film were fabricated using pulsed DC (direct current) sputtering technique and demonstrated magnetization reversal by applied electric field. The fabricated (Bi0.41La0.59)(Fe0.75Co0.25)O-3 films exhibited hysteresis curves of both ferromagnetic and ferroelectric behavior. The saturated magnetization (M-s) of the multiferroic film was about 70 emu/cm(3). The squareness (S) (=remanent magnetization (M-r)/M-s) and coercivity (H-c) of perpendicular to film plane are 0.64 and 4.2 kOe which are larger compared with films in parallel to film plane of 0.5 and 2.5 kOe. The electric and magnetic domain structures of the (Bi0.41La0.59)(Fe0.75Co0.25)O-3 film analyzed by electric force microscopy (EFM) and magnetic force microscopy (MFM) were clearly induced with submicron scale by applying a local electric field. This magnetization reversal indicates the future realization of high performance magnetic device with low power consumption.
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