Impacts from triple phases of a germanium-antimony-tellurium film coating on thermal emission from SiO2 and boron doped Si

This work experimentally demonstrates mid-infrared emittance spectra of dielectric and semi-conductor substrates with and without a germanium-antimony-tellurium (GST) film coating. The film experiences non-volatile phase changes at 140 degrees C and 300 degrees C. Impacts from amorphous, face-centered cubic, and hexagonal close packed phases on spectral emittance are demonstrated within the spectral range from 4 mu m to 18 mu m. The spectra are measured at 100 degrees C, 200 degrees C, 300 degrees C, and 400 degrees C to show temperature dependence. Close-to-total emittance is calculated for comparison. The GST film can reduce emittance from a SiO2 substrate, but it raises close-to-normal emittance as well as the spectral emittance at wavelengths 5 mu m <= lambda <= 18 mu m for the doped Si substrate. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

This study experimentally demonstrates the mid-infrared emittance spectra of dielectric and semi-conductor substrates with and without a GST film coating, showing the impact of temperature and the GST film on the emittance of different substrates.