Structural and optical properties of Be-doped high-quality self-catalyzed GaAs nanowires

Crystal-phase control and crystalline quality improvement of GaAs nanowires (NWs) have been realized by dopant (Be) incorporation in GaAs NWs. We demonstrate the improvement of crystalline quality by X-ray diffraction (XRD) spectra combined with high resolution transmission electron microscopy (HRTEM). The crystal-phase control from the wurtzite (WZ)/zinc blende (ZB) mixed phase to the pure ZB phase under the effect of Be doping is clearly revealed by Raman spectra combined with HRTEM. The photoluminescence (PL) revealed the free exciton and WZ/ZB type-II emission peaks of undoped GaAs NWs transform into Be impurity-related emission peak of Be-doped GaAs NWs.

Automated summary

Crystal-phase control and crystalline quality improvement of GaAs nanowires have been achieved through dopant (Be) incorporation. XRD spectra combined with HRTEM demonstrate the improvement of crystalline quality, while Raman spectra combined with HRTEM clearly reveal the crystal-phase control under the effect of Be doping. Photoluminescence shows the transformation of emission peaks from undoped GaAs nanowires to Be-doped GaAs nanowires.