4.6 Article

Structure, Morphology, Heat Capacity, and Electrical Transport Properties of Ti3(Al,Si)C2 Materials

Journal

MATERIALS
Volume 14, Issue 12, Pages -

Publisher

MDPI
DOI: 10.3390/ma14123222

Keywords

MAX phases; hot pressing synthesis; heat capacity; electrical properties; magnetoresistance; DOS calculations

Funding

  1. Polish National Science Centre [2013/11/B/ST5/02275]
  2. Polish Ministry of Education and Science

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This study examined the properties of Ti3Al1-xSixC2 MAX-phase alloys, showing good crystal structure, metallic properties with high residual resistivity, and a small positive magnetoresistance effect. Silicon doping had a weak impact on resistivity while the magnetoresistance exhibited a quadratic dependence on the magnetic field. Specific heat data indicated slight variations in Debye temperatures and Sommerfeld coefficient values with changes in Si content. Band structure calculations supported experimental results, highlighting the contribution of Al and Si s-electrons to metallic conductivity.
A study of Ti3Al1-xSixC2 (x = 0 to x = 1) MAX-phase alloys is reported. The materials were obtained from mixtures of Ti3AlC2 and Ti3SiC2 powders with hot pressing sintering technique. They were characterised with X-ray diffraction, heat capacity, electrical resistivity, and magnetoresistance measurements. The results show a good quality crystal structure and metallic properties with high residual resistivity. The resistivity weakly varies with Si doping and shows a small, positive magnetoresistance effect. The magnetoresistance exhibits a quadratic dependence on the magnetic field, which indicates a dominant contribution from open electronic orbits. The Debye temperatures and Sommerfeld coefficient values derived from specific heat data show slight variations with Si content, with decreasing tendency for the former and an increase for the latter. Experimental results were supported by band structure calculations whose results are consistent with the experiment concerning specific heat, resistivity, and magnetoresistance measurements. In particular, they reveal that of the s-electrons at the Fermi level, those of Al and Si have prevailing density of states and, thus predominantly contribute to the metallic conductivity. This also shows that the high residual resistivity of the materials studied is an intrinsic effect, not due to defects of the crystal structure.

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