Photothermal effects in semiconductors induced by surface absorption of a uniform laser radiation under modified Green-Lindsay theory

In this work, the photothermal interaction generated by surface absorption of laser radiation in a semiconducting medium is studied in the context of strain and temperature rate-dependent theory. The medium surface is exposed to a uniform laser beam and is considered to be stresses free. The integral transform method is used to obtain the general solution of the considered problem, where the inverse of the chosen transformation is computationally obtained. The Silicon material is selected to analyze the consistency of the results of the novel model.

Automated summary

This work investigates the photothermal interaction in a semiconducting medium caused by laser radiation surface absorption within a theory that considers strain and temperature rate dependencies. The surface of the medium is assumed to be stress-free and exposed to a uniform laser beam. The general solution to the problem is obtained using the integral transform method, with the inverse transformation being computationally derived. Silicon material is used to analyze the consistency of the results from the novel model.