4.8 Article

Linked Nickel Oxide/Perovskite Interface Passivation for High-Performance Textured Monolithic Tandem Solar Cells

Journal

ADVANCED ENERGY MATERIALS
Volume 11, Issue 40, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202101662

Keywords

nickel oxide; passivation; perovskites; solar cells; tandems

Funding

  1. King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) [KAUST OSR-2018-CARF/CCF-3079, KAUST OSR-CRG RF/1/3383, KAUST OSR-CRG2018-3737, IED OSR-2019-4208]

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This study presents an efficient NiOx/perovskite interface passivation strategy using an organometallic dye molecule to enhance the performance and stability of PSCs. The power conversion efficiency of single-junction p-i-n PSCs significantly increases, and highly efficient textured monolithic p-i-n perovskite/silicon tandem solar cells can be fabricated. Additionally, the passivation strategy improves device stability by preventing undesirable chemical reactions at the NiOx/perovskite interface.
Sputtered nickel oxide (NiOx) is an attractive hole-transport layer for efficient, stable, and large-area p-i-n metal-halide perovskite solar cells (PSCs). However, surface traps and undesirable chemical reactions at the NiOx/perovskite interface are limiting the performance of NiOx-based PSCs. To address these issues simultaneously, an efficient NiOx/perovskite interface passivation strategy by using an organometallic dye molecule (N719) is reported. This molecule concurrently passivates NiOx and perovskite surface traps, and facilitates charge transport. Consequently, the power conversion efficiency (PCE) of single-junction p-i-n PSCs increases from 17.3% to 20.4% (the highest reported value for sputtered-NiOx based PSCs). Notably, the N719 molecule self-anchors and conformally covers NiOx films deposited on complex surfaces. This enables highly efficient textured monolithic p-i-n perovskite/silicon tandem solar cells, reaching PCEs up to 26.2% (23.5% without dye passivation) with a high processing yield. The N719 layer also forms a barrier that prevents undesirable chemical reactions at the NiOx/perovskite interface, significantly improving device stability. These findings provide critical insights for improved passivation of the NiOx/perovskite interface, and the fabrication of highly efficient, robust, and large-area perovskite-based optoelectronic devices.

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