4.8 Article

The Role of Surface States on Reduced TiO2@BiVO4 Photoanodes: Enhanced Water Oxidation Performance through Improved Charge Transfer

Journal

ACS CATALYSIS
Volume 11, Issue 13, Pages 7637-7646

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acscatal.1c00686

Keywords

photoelectrochemical water oxidation; surface states; oxygen vacancies; atomic layer deposition; bismuth vanadate

Funding

  1. University Research Priority Program (URPP) for Solar Light to Chemical Energy Conversion (LightChEC)
  2. Swiss National Science Foundation [CRSII2_160801/1]
  3. China Scholarship Council (CSC)

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Efficient transfer of photogenerated carriers and improved stability against corrosion are crucial for maximizing the performance of photoanodes. In this study, a reduced catalytic layer formed on a TiO2 protected BiVO4 photoanode has been shown to enhance photogenerated carrier transfer efficiency and stability. The results indicate that the photoanodes displayed high photocurrent and more negative onset potential at pH 8, highlighting the importance of surface property tuning for optimal photoelectrochemical performance.
The efficient transfer of photogenerated carriers and improved stability against corrosion are essential to maximize the performance of photoanodes. Herein, a reduced catalytic layer formed on a TiO2 protected BiVO4 (R-TiO2@BiVO4) photoanode has been prepared for progress on both fronts. Specifically, R-TiO2@BiVO4 photoanodes at pH 8 displayed a high photocurrent of 2.1 mA cm(-2) at 1.23 VRHE and a more negative onset potential of 234 mV(RHE) compared to pristine BiVO4. We here discovered two surface states on BiVO4 photoanodes through photoelectrochemical impedance studies. In contrast, only one of them, located at higher potential, appeared on oxygen-vacancy-rich R-TiO2@BiVO4 photoanodes. For BiVO4 photoanodes, the first surface state (SS1) is located near the onset potential (similar to 0.45 V-RHE), while the second surface state (SS2) sits near the water oxidation potential (similar to 1.05 V-RHE). However, SS1 at lower energetics, which originated from water oxidation intermediates with slow kinetics, is passivated in R-TiO2@BiVO4 photoanodes. In contrast, the hole densities in SS2 at higher energetics were greatly enhanced in R-TiO2@BiVO4 photoanodes, due to the increased accumulation of intermediates with fast water oxidation kinetics. Therefore, SS2 is proposed as a reaction center, which is related to the amount and occupancy of oxygen vacancies. Additionally, surface recombination centers in BiVO4 photoanodes are passivated by TiO2, which prevents electron trapping into the irreversible surface conversion of VO2+ to VO2+. These observations provide fundamental understanding of the role of surface states and of the function of oxygen vacancies in BiVO 4 photoanodes. Our study offers detailed insight into key strategies for optimal photoelectrochemical performance through surface property tuning.

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