Flat epitaxial quasi-1D phosphorene chains

The emergence of peculiar phenomena in 1D phosphorene chains (P chains) has been proposed in theoretical studies, notably the Stark and Seebeck effects, room temperature magnetism, and topological phase transitions. Attempts so far to fabricate P chains, using the top-down approach starting from a few layers of bulk black phosphorus, have failed to produce reliably precise control of P chains. We show that molecular beam epitaxy gives a controllable bottom-up approach to grow atomically thin, crystalline 1D flat P chains on a Ag(111) substrate. Scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density functional theory calculations reveal that the armchair-shaped chains are semiconducting with an intrinsic 1.80 +/- 0.20 eV band gap. This could make these P chains an ideal material for opto-electronic devices.

Automated summary

This study demonstrates the growth of semiconductor properties of 1D flat P chains with a band gap of 1.80 +/- 0.20 eV on an Ag(111) substrate using molecular beam epitaxy, providing a potential ideal material for opto-electronic devices.