4.8 Article

Ferroelectric-tuned van der Waals heterojunction with band alignment evolution

Journal

NATURE COMMUNICATIONS
Volume 12, Issue 1, Pages -

Publisher

NATURE RESEARCH
DOI: 10.1038/s41467-021-24296-1

Keywords

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Funding

  1. Major State Basic Research Development Program [2016YFB0400801]
  2. Natural Science Foundation of China [62025405, 61835012, 62075228, 61974153, 61905267]
  3. Strategic Priority Research Program of the Chinese Academy of Sciences [XDB44000000]
  4. Key Research Project of Frontier Sciences of Chinese Academy of Sciences [QYZDY-SSW-JSC042]
  5. Key Research Program of Frontier Sciences, CAS [ZDBS-LY-JSC045]
  6. Shanghai Sailing Program [19YF1454900]
  7. China Postdoctoral Science Foundation [2019M661431]

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Band alignment transition of GeSe/MoS2 heterojunction is demonstrated in a ferroelectric-tuned van der Waals heterojunction device with high performance, showing a high-performance polarization-sensitive photodetector and enhanced dichroism ratios in a broad spectrum from visible to near-infrared.
Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In a specific van der Waals heterojunction, the band alignment engineering is crucial and feasible to realize high performance and multifunctionality. Here, we design a ferroelectric-tuned van der Waals heterojunction device structure by integrating a GeSe/MoS2 VHJ and poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from the ferroelectric polarization can effectively modulate the band alignment of the GeSe/MoS2 heterojunction. Band alignment transition of the heterojunction from type II to type I is demonstrated. The combination of anisotropic GeSe with MoS2 realizes a high-performance polarization-sensitive photodetector exhibiting low dark current of approximately 1.5 pA, quick response of 14 mu s, and high detectivity of 4.7 x 10(12) Jones. Dichroism ratios are also enhanced by ferroelectric polarization in a broad spectrum from visible to near-infrared. The ferroelectric-tuned GeSe/MoS2 van der Waals heterojunction has great potential for multifunctional detection applications in sophisticated light information sensing. More profoundly, the ferroelectric-tuned van der Waals heterojunction structure provides a valid band-engineering approach to creating versatile devices. Band alignment engineering is important to realize high performance and multifunctionality in a specific van der Waals heterojunction. Here, the authors observe band alignment transition of the heterojunction in a ferroelectric-tuned van der Waals heterojunction device with high performance.

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