4.8 Article

High-responsivity graphene photodetectors integrated on silicon microring resonators

Journal

NATURE COMMUNICATIONS
Volume 12, Issue 1, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41467-021-23436-x

Keywords

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Funding

  1. DSTL
  2. EPSRC [EP/L016087/1, EP/K01711X/1, EP/K017144/1, EP/N010345/1]
  3. ERC grant Hetero2D
  4. EU Graphene Flagship

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The integration of a photo-thermoelectric graphene photodetector with a Si micro-ring resonator has successfully addressed the issue of low responsivity in graphene-based optical receivers. With a voltage responsivity of around 90 V/W and reduced energy-per-bit consumption, these receivers now perform on par with established semiconductor technology.
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the current GPDs' low responsivity when compared to conventional PDs. Here we overcome this by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve>90% light absorption in a similar to 6 mu m SLG channel along a Si waveguide. Cavity-enhanced light-matter interactions cause carriers in SLG to reach similar to 400 K for an input power similar to 0.6 mW, resulting in a voltage responsivity similar to 90 V/W, with a receiver sensitivity enabling our GPDs to operate at a 10(-9) bit-error rate, on par with mature semiconductor technology, but with a natural generation of a voltage, rather than a current, thus removing the need for transimpedance amplification, with a reduction of energy-per-bit, cost, and foot-print. Optical receivers based on graphene still suffer from low responsivity. Here, the authors integrate a photo-thermoelectric graphene photodetector with a Si micro-ring resonator, and obtain a voltage responsivity similar to 90 V/W and a reduction of energy-per-bit consumption, enabling performance on par with mature semiconductor technology.

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