Journal
NATURE COMMUNICATIONS
Volume 12, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41467-021-25705-1
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Funding
- Gordon and Betty Moore Foundation EPiQS Initiative [GBMF9070]
- ARO [W911NF-16-1-0034]
- Global Research Outreach program of the Samsung Advanced Institute of Technology (SAIT)
- STC Center for Integrated Quantum Materials, NSF [DMR-1231319]
- Japan Society for the Promotion of Science, KAKENHI [JP19K23415, JP20K14398, JP20H05148]
- Grant for Basic Science Research Projects from The Sumitomo Foundation
- Rutgers Center for Material Theory Distinguished Postdoctoral Fellowship
- National Science Foundation [DMR-1644779]
- State of Florida
- DOE
- DOE BES 'Science at 100T' grant
- FAS Division of Science Research Computing Group at Harvard University
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Transition metal kagome compounds have been identified as a promising material platform to investigate the electronic flat band. The authors report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn using planar tunneling spectroscopy supported by first-principles calculations. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface provides a unique opportunity to probe flat band induced phenomena with simultaneous electrical tuning of its properties.
The kagome lattice has long been regarded as a theoretical framework that connects lattice geometry to unusual singularities in electronic structure. Transition metal kagome compounds have been recently identified as a promising material platform to investigate the long-sought electronic flat band. Here we report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn by means of planar tunneling spectroscopy. Employing a Schottky heterointerface of FeSn and an n-type semiconductor Nb-doped SrTiO3, we observe an anomalous enhancement in tunneling conductance within a finite energy range of FeSn. Our first-principles calculations show this is consistent with a spin-polarized flat band localized at the ferromagnetic kagome layer at the Schottky interface. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface will provide a unique opportunity to probe flat band induced phenomena in an energy-resolved fashion with simultaneous electrical tuning of its properties. Furthermore, the exotic surface state discussed herein is expected to manifest as peculiar spin-orbit torque signals in heterostructure-based spintronic devices. Transition metal kagome compounds have been shown to host flat bands in their bulk electronic spectrum. Here, using planar tunnelling spectroscopy supported by first-principles calculations, the authors report the signature of a novel type of flat band at the surface of antiferromagnetic kagome metal FeSn.
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