4.8 Article

Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors

Journal

NATURE COMMUNICATIONS
Volume 12, Issue 1, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41467-021-24725-1

Keywords

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Funding

  1. DFG through the Wurzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter-ct.qmat [EXC 2147, 39085490, DY18/13-1]
  2. Alexander von Humboldt (AvH) Foundation
  3. Australian Research Council [CE200100010]
  4. Asian Office of Aerospace Research and Development [FA2386-20-1-4014]
  5. Open Access Publication Fund of the University of Wuerzburg

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Spin defects in two-dimensional materials, such as negatively charged boron vacancies in hexagonal boron nitride, are demonstrated as sensors for magnetic fields, temperature, and pressure. These defects show high-spin triplet ground state and bright spin-dependent photoluminescence, making them potential candidates for quantum sensing applications. The frequency shift in optically detected magnetic resonance measurements is sensitive not only to static magnetic fields, but also to temperature and pressure changes, related to crystal lattice parameters. Spin-rich hexagonal boron nitride films may find applications as intrinsic sensors in heterostructures made of functionalized 2D materials.
Spin defects in two-dimensional materials potentially offer unique advantages for quantum sensing in terms of sensitivity and functionality. Here, the authors demonstrate the use of spin defects in hexagonal boron nitride as sensors of magnetic field, temperature and pressure, and show that their performance is comparable or exceeds that of existing platforms. Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (V-B(-)) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the V-B(-). Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.

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