Journal
ULTRAMICROSCOPY
Volume 228, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.ultramic.2021.113334
Keywords
Atom probe tomography; Sample preparation; Plasma FIB; Damage; Ion implantation; So calculation
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The study found that lowering the beam energy reduces the implantation depth of plasma FIB ion species, and significant implantation was still observed at low beam energies for N, O and Ar. Nitrides and oxides were formed when using N and O, and Xe had the lowest implantation depth compared to Ar, N and O.
In this study atom probe tomography was used to determine the implantation depth of four different plasma FIB ion species - xenon, argon, nitrogen, and oxygen - implanted at different acceleration voltages. It was found that lowering the beam energy reduces the implantation depth, but significant implantation was still observed for N, O and Ar at beam energies as low as 2 kV. Furthermore, nitrides and oxides were observed that were formed when using N and O. Xe had the lowest implantation depth compared to Ar, N and O when using the same conditions. No Xe ions were detected in the sample prepared at 2 kV. Experimentally-determined implantation depths were compared to calculated implantation depths. The experiments exhibited deeper-than-predicted ion implantation into the microstructure, but lower-than-predicted ion concentrations.
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