Journal
THIN SOLID FILMS
Volume 734, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2021.138851
Keywords
Electron-beam evaporation; Tungsten disulphide; Stacked elemental layer; Raman spectroscopy; Electrical resistivity
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Funding
- DST, GOI [EMR/2017/0001287]
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Highly oriented, vertically stacked, thin films of tungsten disulphide (WS2) were synthesized using electron-beam evaporation, and the growth mechanism and evolution of the thin films were studied. The films exhibited semiconductor behavior, with changes in properties observed after annealing. Additionally, a heterojunction of WS2 (1073 K)/pSi displayed an increased photocurrent under white light illumination.
Highly oriented, vertically stacked, thin films of tungsten disulphide (WS2) were synthesized using electron-beam evaporation, in the stacked elemental layer configuration. The growth mechanism and the evolution of the thin films were understood from the cross-sectional morphological studies. A preferential growth along the (001) plane alongwith an increase in crystallinity was observed upon annealing. With annealing, a decrease in the optical band-gap (-0.08 eV) of the films was also observed. A semiconducting behaviour of the films has been observed from the temperature-dependent resistivity measurements. The highest resistivity, of -4.65 x 107 omega.m at room temperature, was observed for the films annealed at 1073 K. A heterojunction of WS2 (1073 K)/pSi showed an increased photocurrent of -75 mu A, under white light illumination
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