4.7 Article Proceedings Paper

Characterization of the combination of microwave and laser ablation plasmas

Journal

SURFACE & COATINGS TECHNOLOGY
Volume 422, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2021.127509

Keywords

Microwave plasma; Pulsed laser ablation; Aluminum nitride thin films

Funding

  1. CONACYT, Mexico [652]

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The study combines continuous plasma and pulsed plasma to form thin films, using high densities of microwave discharge and a wide range of ion energies in pulsed laser ablation plasmas. This method reduces the need for dangerous and corrosive substances, as the required element can be obtained from pure solid targets. Additionally, the presence of contaminants, such as oxygen, is significantly reduced by conducting the laser ablation process in plasma as the background gas instead of a neutral gas.
The main aim of the present work is to report on the study of the combination of continuous plasma, formed by a microwave electron cyclotron resonance (ECR) discharge and the pulsed plasma obtained by the laser ablation of a solid target. Such arrangement allows studying the formation of materials in the form of thin films making use of the relatively high densities of the microwave discharge and the wide range of ion energies produced in the pulsed laser ablation plasmas. With this arrangement it is possible to deposit thin films of materials that in the usual microwave discharge require the use of dangerous and corrosive substances, as the required element is obtained from a pure solid target. Moreover, as the laser ablation process is carried out in plasma as the background gas, instead of a neutral gas, the presence of contaminants, such as oxygen can be significantly reduced. For the purpose of the present paper a nitrogen microwave ECR discharge was combined with the plasma created during the ablation of an aluminum target, in order to deposit AlN thin films. Plasma parameters were measured by a Langmuir probe, and the chemical species contained in the plasma were analyzed by optical emission spectroscopy (OES). The optical properties and chemical composition of the AlN thin films are reported.

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