Journal
SOLID-STATE ELECTRONICS
Volume 183, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2021.108085
Keywords
RRAM; NVM; MIM stack; Resistive switching; hafnium oxide; Aluminium oxide; Alumina; Hafnium-aluminum oxide
Funding
- Spanish Ministry of Science, Innovation and Universities [TEC2017-84321-C4-2-R]
- Feder funds
- European Regional Development Fund project Emerging orders in quantum and nanomaterials [TK134]
- Estonian Research Agency [PRG753]
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In this paper, the electrical characterization of HfO2:Al2O3 based metal-insulator-metal structures prepared using atomic layer deposition is reported. The study reveals the dependence of electrical behavior on the HfO2:Al2O3 cycle ratio and proposes an explanation for the differences in Resistive Switching properties based on the distribution of HfAlOx layers. The paper also discusses the dependence of Resistive Switching properties on the growth temperature of the samples.
Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator-metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlOx layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed.
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