Journal
SOLID STATE COMMUNICATIONS
Volume 332, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2021.114341
Keywords
Current transport mechanism; ZnO; n-SiC; p-Si; Activation energies; Interface states
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Funding
- SeoulTech (Seoul National University of Science and Technology)
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The ALD growth of ZnO on n-SiC/p-Si heterojunction was investigated, and the current transport mechanism was analyzed, showing different I-V characteristics and activation energies for reverse currents. The C-V characteristics revealed a higher interface state density for n-ZnO/n-SiC/p-Si heterojunction.
The atomic layer deposition (ALD) growth of ZnO on n-SiC/p-Si heterojunction was carried out and the current transport mechanism of ZnO/n-SiC/p-Si heterojunction was investigated. The current-voltage (I-V) characteristics for n-SiC/p-Si heterojunction showed the normal p-n junction properties, which became reversal for n-ZnO/ n-SiC/p-Si heterojunction. The Arrhenius plots of reverse currents versus 1/kT produced the activation energies of 0.42 and 0.21 eV for n-SiC/p-Si and n-ZnO/n-SiC/p-Si heterojunctions, respectively. The decrease of current values with the temperature for n-ZnO/n-SiC/p-Si heterojunction would be due to the interface states near the ZnO/SiC interface. Capacitance-voltage (C-V) characteristics revealed the higher interface state density for nZnO/n-SiC/p-Si heterojunction.
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