Performance enhancement in Sb2S3 solar cell processed with direct laser interference patterning

Direct laser interference patterning (DLIP) is used to fabricate large-area, periodic surface patterns on Sb2S3 substrates to enhance the performance of solar cells. Comparing the power conversion efficiencies (PCE) to the reference cell on flat Sb2S3 film, a relative increase of 73% is observed for the DLIP patterned device. Our systematic study reveals that DLIP promotes beneficial crystallization of the Sb2S3 film. Light scattering is increased and recombination is depressed in the textured Sb2S3 film. It is expected that our study can provide a roadmap for the further development of photovoltaic devices (PVs) based on chalcogenide semiconductors.

Automated summary

The DLIP technique is used to improve the performance of solar cells on Sb2S3 substrates by creating large-area, periodic surface patterns. Research shows that DLIP facilitates beneficial crystallization of the Sb2S3 film, increasing light scattering and reducing recombination in the textured film, leading to a 73% increase in power conversion efficiency compared to flat film reference cells. This study is expected to provide a roadmap for the further development of photovoltaic devices based on chalcogenide semiconductors.