High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors

Solution-based bottom-gate zinc oxide thin film transistors (TFTs) were fabricated, remaining functional and demonstrating stability under extreme gamma irradiation conditions. Unpassivated TFTs were fabricated on samples with different number of ZnO layers grown via sol-gel spin coating technique. The devices were characterized before and after exposure to a cumulative dose of 220 MRad (air) of gamma irradiation. Atomic force microscopy (AFM), x-ray diffraction (XRD), and photoluminescence (PL) were employed to characterize the TFT active layers. Thickness measurements and optical images suggest the removal of the channel surface, conceivably due to cumulative effect of displacement damage near the ZnO surface. Device electrical characteristics were extracted from current-voltage measurements. The impact of displacement damage on the degradation/enhancement of device characteristics as a consequence of surface/bulk effects is discussed.

Automated summary

Solution-based bottom-gate zinc oxide thin film transistors were fabricated and remained functional and stable under extreme gamma irradiation conditions. The removal of the channel surface due to the cumulative effect of displacement damage near the ZnO surface was observed through thickness measurements and optical images. The impact of displacement damage on the device characteristics was discussed in terms of surface/bulk effects.